Browsing by Author "Dahal, Rajendra"
Now showing items 1-6 of 6
-
Chemical vapor deposition of hexagonal boron nitride for the development of neutron detectors
Ahmed, Kawser (Rensselaer Polytechnic Institute, Troy, NY, 2017-08)Chemical vapor deposition (CVD) processes were developed for hBN growth on sapphire, (111)Si, and AlN/(111)Si substrates, and (111)Si vertical sidewalls of parallel trenches. Detailed characterizations of the crystalline, ... -
Electrophorteic deposition of boron carbide in high aspect ratio trenches in silicon for neutron detector application
Rahman, Muktadir (Rensselaer Polytechnic Institute, Troy, NY, 2015-05)There has been a lot of interest in the design and fabrication of high efficiency solid- state neutron detectors during the last few years. This interest is mainly attributed to the necessity of detecting special nuclear ... -
Fabrication and characterization of a novel self-powered solid-state neutron detector
Huang, Kuan-Chih (Jacky) (Rensselaer Polytechnic Institute, Troy, NY, 2014-08)Since neutrons are a very specific indicator of special nuclear materials (SNM), high efficiency neutron detectors are needed for the detection of illicit SNM at seaports, airports and border crossings. Besides, neutron ... -
Fabrication of cost-effective solid-state neutron detectors and characterization
Wu, Jia-Woei (Rensselaer Polytechnic Institute, Troy, NY, 2016-12)Neutron detectors are important for civilian and defense applications since they can identify the presence of special nuclear material (SNM). However, the use of present neutron detector system for personal radiation ... -
Metalorganic chemical vapor deposition of cadmium telluride for solar cell applications
Su, Peng-Yu (Rensselaer Polytechnic Institute, Troy, NY, 2015-12)In the first part of the work, fundamental studies on heterojunction solar cells using single crystal CdTe were carried out to understand the limit of CdTe solar cells. Current thin-film CdTe solar cells are polycrystalline ... -
Metalorganic chemical vapor deposition of II-VI semiconductors for surface passivation of HgCdTe IR detectors
Banerjee, Sneha (Rensselaer Polytechnic Institute, Troy, NY, 2016-05)CdTe has been the preferred material for surface passivation of HgCdTe IR detectors. Deposition of CdTe using MOCVD ensures good conformal coverage on mesa-etched, high aspect-ratio focal plane array (FPA) structures for ...