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dc.rights.licenseRestricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Libraries.
dc.contributorManiatty, Antoinette M.
dc.contributorPicu, Catalin R.
dc.contributorSamuel, Johnson
dc.contributorDutta, Partha S.
dc.contributorBondokov, Robert
dc.contributor.authorKarvanirabori, Payman
dc.date.accessioned2021-11-03T08:13:52Z
dc.date.available2021-11-03T08:13:52Z
dc.date.created2014-10-08T11:05:32Z
dc.date.issued2014-08
dc.identifier.urihttps://hdl.handle.net/20.500.13015/1195
dc.descriptionAugust 2014
dc.descriptionSchool of Engineering
dc.description.abstractIn this work, thermal-mechanical models are being developed, based on underlying micromechanical behavior of III-nitride single crystals at growth temperatures, for use in process design. A crystal plasticity model that is capable of capturing the underlying mechanisms of dislocation motion, multiplication, and interactions in wurtzite structure (hexagonal) crystals is defined to accurately model the elastic-plastic behavior of GaN and AlN crystals at elevated temperatures. The model for AlN is extended from relations developed for GaN based on available experimental data. Algorithms for integrating the constitutive model and computing the consistent tangent modulus are formulated, and the material model is implemented into a crystal plasticity finite element framework. Finite element models of crystal growth for different processing conditions are simulated. The simulation predicts cracking and dislocation defect density in order to improve the yield and reduce the manufacturing cost of high quality III-nitride semiconductors. Furthermore, the resulting simulation capability can be used in conjunction with relevant experiments to backout key thermal-mechanical material properties at high temperatures.
dc.language.isoENG
dc.publisherRensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartofRensselaer Theses and Dissertations Online Collection
dc.subjectMechanical engineering
dc.titleThermal-mechanical modeling of single crystal AlN and GaN
dc.typeElectronic thesis
dc.typeThesis
dc.digitool.pid173015
dc.digitool.pid173016
dc.digitool.pid173017
dc.rights.holderThis electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degreePhD
dc.relation.departmentDept. of Mechanical, Aerospace, and Nuclear Engineering


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