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dc.rights.licenseRestricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Research Libraries.
dc.contributorWetzel, Christian
dc.contributorHuang, Zhaoran Rena
dc.contributor.authorTomasulo, Stephanie
dc.date.accessioned2021-11-03T08:15:28Z
dc.date.available2021-11-03T08:15:28Z
dc.date.created2009-06-09T16:15:40Z
dc.date.issued2009-08
dc.identifier.urihttps://hdl.handle.net/20.500.13015/1239
dc.descriptionAugust 2009
dc.descriptionSchool of Engineering
dc.language.isoENG
dc.publisherRensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartofRensselaer Theses and Dissertations Online Collection
dc.subjectElectrical engineering
dc.titleCharacterization of indium gallium nitride multiple quantum wells for potential use as green laser diodes
dc.typeElectronic thesis
dc.typeThesis
dc.digitool.pid17370
dc.digitool.pid17371
dc.digitool.pid17373
dc.digitool.pid17372
dc.digitool.pid17374
dc.rights.holderThis electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degreeMS
dc.relation.departmentDept. of Electrical, Computer, and Systems Engineering


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