Optoelectronic characterization of hyperdoped silicon thin films

Authors
Hutchinson, David
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Other Contributors
Persans, Peter D., 1953-
Huang, Zhaoran Rena
Lewis, Kim M.
Schroeder, John
Issue Date
2014-12
Keywords
Physics
Degree
PhD
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
By controlling the surface illumination conditions the locations within devices where photocarriers are generated can be manipulated. This level of control allows for the investigation of carrier transport behavior within the films. Two primary techniques are employed to control illumination conditions. The first is Light Beam Induced Current surface mapping. This technique provided experimental confirmation of sub-band photocurrent response within gold hyperdoped silicon. This technique also allowed for the electronic characterization of the internal gain demonstrated by single crystal sulfur hyperdoped material. The electronic properties of this gain are most effectively described with a trapped carrier barrier height lowering mechanism.
Description
December 2014
School of Science
Department
Dept. of Physics, Applied Physics, and Astronomy
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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