Space- and ground-based crystal growth of doped InSb
Authors
Churilov, Alexei
ORCID
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Other Contributors
Ostrogorsky, A. G.
Glicksman, M. E.
Borca-Tasçiuc, Theodorian
Steinbruchel, Christoph
Glicksman, M. E.
Borca-Tasçiuc, Theodorian
Steinbruchel, Christoph
Issue Date
2005-05
Keywords
Mechanical engineering
Degree
PhD
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
Numerical simulations were performed to determine the effect of residual microaccelerations on the distribution of dopants (Te and Zn) during solidification of InSb in space. A "moving geometry" model was developed and used to account for the reduction in melt size during growth. The model demonstrates that diffusion controlled segregation in doped InSb can be obtained at 10-5 g0 gravity for the considered growth parameters. The results for the moving geometry and semiinfinite melt domain models are compared to each other and to the analytical correlations for the case of diffusion-controlled segregation.
Description
May 2005
School of Engineering
School of Engineering
Department
Dept. of Mechanical Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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