Electrophorteic deposition of boron carbide in high aspect ratio trenches in silicon for neutron detector application
Authors
Rahman, Muktadir
ORCID
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Other Contributors
Bhat, Ishwara B.
Dahal, Rajendra
Lu, James
Dahal, Rajendra
Lu, James
Issue Date
2015-05
Keywords
Electrical engineering
Degree
MS
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
Electrophoretic Deposition is a colloidal process that utilizes an external electric field to influence charged micro or nanoparticles in a suspension to deposit onto a material surface. It is hypothesized that EPD can be used to fill the high aspect ratio trench-patterned microstructures with boron carbide (B4C) nanoparticles. EPD has been used in the ceramic industry for a long time and recently has found numerous applications due to its low cost, reduced formation time, simple apparatus requirement and versatility in numerous unique applications. It is expected that the fabrication cost of a trench patterned microstructure using wet etching process and filled with B4C nanoparticles through EPD process is significantly lower compared to patterns etched using DRIE and filled through the LPCVD process.
Description
May 2015
School of Engineering
School of Engineering
Department
Dept. of Electrical, Computer, and Systems Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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