Hot electron effects in semiconductors.

Authors
Moore, James Scott
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Other Contributors
Das, P.
Doremus, R. H.
Huntington, H.
MacCrone, R. K.
Issue Date
1981-12
Keywords
Materials engineering
Degree
PhD
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
In the case of quasi-two-dimensional semiconductors, this treatment is applied to a [100] inversion layer in silicon. Under a high electric field, energy levels become grouped into subbands, so that motion of carriers perpendicular to the surface becomes quantized; thus, the energy, momentum and population transfer relaxation rates appropriate to the individual levels must be considered in the calculations, along with their relation to velocity overshoot. Previous work was performed under the assumption that intervalley scattering is a local phenomenon, i.e., a function only of electron temperature of the initial valley. In the present work, this assumption has been relaxed, and the intervalley coupling of electron temperature is taken into account. dc and transient response characteristics for both uncoupled and coupled models are performed, and the results are compared.
Description
December 1981
School of Engineering
Department
Dept. of Materials Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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