Defect-induced optoelectronic response in single-layer group-VI transition-metal dichalcogenides
Authors
Chow, Philippe K.
ORCID
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Other Contributors
Koratkar, Nikhil A. A.
Gall, Daniel
Shi, Yunfeng
Terrones, H. (Humberto)
Lu, T.-M. (Toh-Ming), 1943-
Gall, Daniel
Shi, Yunfeng
Terrones, H. (Humberto)
Lu, T.-M. (Toh-Ming), 1943-
Issue Date
2015-12
Keywords
Materials engineering
Degree
PhD
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
This thesis explores the behavior of defects in atomically-thin TMDC layers in response to optical stimuli using a combination of steady-state photoluminescence, reflectance and Raman spectroscopy at room-temperature. By systematically varying the defect density using plasma-irradiation techniques, an unprecedented room-temperature defect-induced monolayer PL feature was discovered. High-resolution transmission electron microscopy correlated the defect-induced PL with plasma-generation of sulfur vacancy defects while reflectance measurements indicate defect-induced sub-bandgap light absorption. Excitation intensity-dependent PL measurements and exciton rate modeling further help elucidate the origin of the defect-induced PL response and highlights the role of non-radiative recombination on exciton conversion processes.
Description
December 2015
School of Engineering
School of Engineering
Department
Dept. of Materials Science and Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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