Author
Devender
Other Contributors
Ramanath, G. (Ganpati); Borca-Tasçiuc, Theodorian; Keblinski, Pawel; Hull, Robert, 1959-; Mahajan, Ravi;
Date Issued
2015-12
Subject
Materials engineering
Degree
PhD;
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.;
Abstract
Realizing materials with high thermoelectric figure-of-merit ZT is an exacting challenge because it entails simultaneously obtaining a high Seebeck coefficient , a high electrical conductivity, and a low thermal conductivity, while these properties are usually unfavorably coupled. This thesis demonstrates multifold enhancements in the power factor in sulfur-doped binary and ternary pnictogen chalcogenide nanocrystals and assemblies, and describes the property enhancement mechanisms. The correlations between interfacial thermal and electronic transport, and interfacial diffusion and phase formation in metallized n- and p-type pnictogen chalcogenide structures are also revealed. We show that 400 ppm to 2 at.% sulfur doping can increase both Seebeck coefficient and electrical conductivity, while maintaining low thermal conductivity. Our results show that sulfur-induced property enhancements in Bi2Te2Se are underpinned by increased density of states effective mass, unlike the mechanism of diminished bipolar charge carrier transport prevalent in sulfur-doped Bi2Te3. Exploiting such effects is anticipated to be attractive for realizing higher ZT nanomaterials.; We also show that electrical contact conductivity in metallized pnictogen chalcogenide interfaces is sensitive to metal diffusion and telluride formation. In particular, Ni contacts yield the highest electrical contact conductivity and Cu the lowest, correlating with extent of metal diffusion and p-type metal-telluride formation. We finally show that pnictogen chalcogenides metallized with Sn-Ag-Cu/Ni solder-barrier bilayers exhibit ten-fold higher interfacial thermal conductance than that obtained with In/Ni bilayer metallization. Decreased interdiffusion and diminution of interfacial SnTe formation due to Ni layer correlates with the higher interfacial thermal conductance. Our findings should facilitate the design and development of pnictogen chalcogenide-based thermoelectric materials and devices.;
Description
December 2015; School of Engineering
Department
Dept. of Materials Science and Engineering;
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection;
Access
Restricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Libraries.;