Metalorganic chemical vapor deposition of cadmium telluride for solar cell applications
Authors
Su, Peng-Yu
ORCID
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Other Contributors
Bhat, Ishwara B.
Lu, T.-M. (Toh-Ming), 1943-
Lu, James Jian-Qiang
Dahal, Rajendra
Lu, T.-M. (Toh-Ming), 1943-
Lu, James Jian-Qiang
Dahal, Rajendra
Issue Date
2015-12
Keywords
Electrical engineering
Degree
PhD
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
In the first part of the work, fundamental studies on heterojunction solar cells using single crystal CdTe were carried out to understand the limit of CdTe solar cells. Current thin-film CdTe solar cells are polycrystalline with low doping concentrations (10^13 cm^-3 - 10^14 cm^-3) and short lifetime (<10 ns). Hence, there is a room to improve on the performance of thin-film CdTe solar cells. To fabricate solar cells, single crystal CdTe films were grown on GaAs substrates by using MOCVD. Heavily doped p-type CdTe films with hole concentrations up to ~5×10^16 cm^-3 were obtained. Amorphous n-CdS/single crystal p-CdTe solar cells have been fabricated and characterized. Nevertheless, the solar cell performances such as Voc (0.63 V) is still limited by the CdTe crystal quality since high density of dislocations is still present due to the large lattice mismatch between GaAs and CdTe and also between CdTe and CdS.
Description
December 2015
School of Engineering
School of Engineering
Department
Dept. of Electrical, Computer, and Systems Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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