Browsing Rensselaer Libraries by Author "Naik, Harsh"

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4H-SiC lateral MOSFETs on (0001), (000-1) and (11-20) oriented SiC substrates

Naik, Harsh (Rensselaer Polytechnic Institute, Troy, NY, 2009-08)
Study of electrical properties of 4H-SiC/SiO2 interface

Naik, Harsh (Rensselaer Polytechnic Institute, Troy, NY, 2013-08)

An inversion mobility model, extended from that for silicon, has been used to evaluate the different limiting mechanisms for inversion channel mobility of 4H-SiC MOSFETs. The model is used to predict the ultimate performance ...