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    • Electronic properties of palladium doped silicon 

      So, Lingkon (Rensselaer Polytechnic Institute, Troy, NY, 1976-12)
      The concentrations of active palladium for different diffusion temperatures were measured. It is shown that the concentration of PdI is x 10¹⁵ and 3 x 10¹⁴ cm⁻³ at 1200 and 900°C respectively. The concentration of PdII is ...