Bulk crystal growth and infrared absorption studies of GaₓInl₁₋ₓSb
Authors
Chandola, Abhinav
ORCID
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Other Contributors
Dutta, Partha S.
Bhat, Ishwara B.
Schubert, E. Fred
Lin, Shawn-Yu
Bhat, Ishwara B.
Schubert, E. Fred
Lin, Shawn-Yu
Issue Date
2005-12
Keywords
Electrical engineering
Degree
PhD
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
The high quality substrates grown by our periodic solute feeding method has enabled us to perform extensive studies of the below bandgap optical absorption characteristics of GaₓInl₁₋ₓSb alloy system for the first time. Various hole and electron absorption mechanisms such as due to free carriers, intra- and inter-band transitions giverise to significant changes in the absorption characteristics as a function of wavelength and alloy composition. We have been able to establish fitting parameters for undoped and doped GaSb and GaₓInl₁₋ₓSb, that resulted in excellent agreement between experimental transmission data and theoretical expressions for absorption processes. Based on these established fitting parameters, we can easily predict alloy compositions and doping levels (and thereby growth conditions) necessary for any specific absorption characteristics such as high optical transparency.
Description
December 2005
School of Engineering
School of Engineering
Department
Dept. of Electrical, Computer, and Systems Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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