Epitaxy and characterization of cubic GaN and Ga₁₋ₓInₓN on micropatterned Si (001)
Authors
Durniak, Mark T.
ORCID
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Other Contributors
Wetzel, Christian
Gall, Daniel
Ullal, Chaitanya
Dutta, Partha S.
Gall, Daniel
Ullal, Chaitanya
Dutta, Partha S.
Issue Date
2016-08
Keywords
Materials engineering
Degree
PhD
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
Cubic GaInN/GaN heterostructures in the cubic lattice variant have the potential to overcome the limitations of wurtzite structures as commonly used for light emitting and laser diodes. Wurtzite GaInN (0001), suffers from large internal polarization fields, which force design compromises towards ultra-narrow quantum wells and reduced recombination volume and efficiency, particularly in the green, yellow, and red visible spectral regions. Cubic GaInN microstripes, grown here by metal-organic vapor phase epitaxy (MOVPE), on micropatterned Si (001), with {111} v-grooves oriented along Si ⟨01-1⟩, offer a system free of internal polarization fields, wider quantum wells, and a smaller bandgap energy. This thesis focuses on improving understanding of the growth mechanisms of the metastable cubic phase, evaluating the viability of wide quantum well structures, and the development of new cubic LED fabrication techniques.
Description
August 2016
School of Engineering
School of Engineering
Department
Dept. of Materials Science and Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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