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dc.rights.licenseRestricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Libraries.
dc.contributorHella, Mona Mostafa
dc.contributorShur, Michael
dc.contributorConnor, Kenneth A.
dc.contributorSaulnier, Gary J.
dc.contributorYamaguchi, Masashi
dc.contributor.authorWu, Kefei
dc.date.accessioned2021-11-03T08:56:35Z
dc.date.available2021-11-03T08:56:35Z
dc.date.created2018-02-21T14:02:43Z
dc.date.issued2017-12
dc.identifier.urihttps://hdl.handle.net/20.500.13015/2135
dc.descriptionDecember 2017
dc.descriptionSchool of Engineering
dc.description.abstractMoving from circuit blocks to sub systems with an outphasing transmitter architecture proposed to take advantage of the high output power from the frequency doubler. Through the outphasing mechanism, the PA frequency doubler chain can operate in saturation mode to generate high output power and high power added efficiency. An on-off keying (OOK) modulation transmitter is implemented in 130 nm BiCMOS process with a novel outphasing modulator. The transmitter achieves a simulated 6.5 dBm continuous output power and 20 Gb/s modulation speed with 800 mW DC power consumption. The proposed transmitter architecture can also be extended to quadrature phase shift keying (QPSK) modulation with even harmonic frequency multipliers, which will increase the output power, hence, the communication range.
dc.description.abstractMoving from passive building blocks to the active ones, we also discuss in this thesis a number of key circuit blocks that can be employed in communication system or spectroscopy systems. We cover voltage controlled oscillators (VCO), power amplifiers (PA) and frequency doublers with circuit analysis, design and fabrication. The designed VCO achieves 28% tuning range at 103.5 GHz by switching the emitter transmission lines, and has a peak output power of 4.2 dBm, 5.5\% DC to RF efficiency. To generate high power at frequencies close to or exceeding fmax, a frequency doubler with optimized harmonic reflectors over wide bandwidth is proposed. The analysis is verified by electromagnetic simulation and measurement results. A signal chain formed of a power amplifier followed by a doubler stage is fabricated and a saturated output power of 6.5 dBm at 204 GHz with more than 50 GHz bandwidth is reported. The results are considered one of the highest reported figure of merit for mmWave sources compared to state of the art published results.
dc.description.abstractBecause of the reduction in the breakdown voltage of silicon transistors at the nano-scale, to achieve high output power in the mmWave frequency range and above, on-chip power combining structures are proposed, designed, and fabricated in this work. Such power combiners also provide the capability of single ended to differential conversion and vice-versa which is required for interfacing with external sources or antennas. Compensation techniques to reduce the imbalance of the differential output ports of a transformer based balun is analyzed and implemented. Addressing chip area and low loss coupled line based power combiner is also tackled with analysis and prototype development. The proposed coupled line based power combiner occupies less than half of the areas as conventional approaches.
dc.description.abstractAs a future work, we envision that some of the circuits and sub systems could be employed in a wide band signal sources for rotational gas spectroscopy based on harmonic reconfiguration. Through parallel chains of phase shifted amplifier-doubler signal paths that are combined through different configurations, capturing blocks of frequency within the required band of interest, one could realize a spectroscopy system that can span 160 - 360 GHz frequency range while still delivering output power high enough for increased tone detection using room temperature detectors. The work described in the thesis paves the way for advanced mmWave and THz systems in silicon technologies.
dc.description.abstractThe increasing demand for bandwidth in applications such as high speed communication and rotational gas spectroscopy has driven recent research efforts in sub millimeter wave (sub-mmWave) and terahertz circuits and systems. This revived interest goes hand-in-hand with advances in modern CMOS and SiGe technologies that are capable of providing transistors with cutoff frequencies fmax above 200 GHz and expected to reach 700 GHz within few years. Such technologies are key enablers for low cost, high yield, multi-functional and highly integrated digitally enhanced systems. However, as the cutoff frequency of transistors increase, their output power particularly over a wide bandwidth is very limited. In addition, switching such transistors as they operate close to their fmax is a challenging task that requires rethinking the traditional communications and spectroscopy architectures with emphasis on extracting the output power of the transistors with transmitting data rates exceeding tens and hundreds of Gbps and/or scanning a wide bandwidth. This thesis focuses on the research and development of high power, wide band signal sources greater than or equal 200 GHz, and high speed transceivers in silicon-based technologies.
dc.language.isoENG
dc.publisherRensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartofRensselaer Theses and Dissertations Online Collection
dc.subjectElectrical engineering
dc.titleDesign of silicon based terahertz transceiver
dc.typeElectronic thesis
dc.typeThesis
dc.digitool.pid178819
dc.digitool.pid178820
dc.digitool.pid178821
dc.rights.holderThis electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degreePhD
dc.relation.departmentDept. of Electrical, Computer, and Systems Engineering


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