Simulation of light emitting diodes under piezoelectric polarization
Authors
Elsaesser, David Richard
ORCID
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Other Contributors
Wetzel, Christian
Terrones, H. (Humberto)
Shur, Michael
Persans, Peter D., 1953-
Terrones, H. (Humberto)
Shur, Michael
Persans, Peter D., 1953-
Issue Date
2017-05
Keywords
Physics
Degree
PhD
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
Through wave propagation modeling, based on a finite-difference time-domain (FDTD) method, I investigated the optical effects of structures necessary for the for-mation of strain-reduced and cubic GaN LEDs. With the cubic GaN LED I investigated the effect on light extraction efficiency (LEE) due to a triangular-stripe shape that cubic GaN forms in, a result of our growth process for cubic GaN. Comparing the v-stripe cubic GaN to a planar wurtzite LED, I find that the cubic triangular-stripe cubic GaN structure increases the LEE by a factor of 1.9. In addition, I model ways to further enhance the LEE of v-stripe cubic GaN LEDs; namely, a removal of the v-stripe Si substrate, and implementation of a flip-chip LED design. By removing the Si substrate I find a 20% increase in LEE as compared to the cubic GaN LED still on the substrate. Through using a flip-chip design with the triangular-striped cubic GaN it was possible to enhance the LEE by a factor of 1.62 over the cubic GaN LED on a Si substrate. For the strain-reduced LEDs I simulated a nanopatterned GaN/GaInN template. The nanopatterned template was found to exhibit a 40% increase in LEE when compared to a planar GaN templated.
Description
May 2017
School of Science
School of Science
Department
Dept. of Physics, Applied Physics, and Astronomy
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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