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    Performance limits of 4H-SiC and 2H-GaN vertical superjunction (SJ) devices

    Author
    Zhou, Xiang
    View/Open
    179426_Zhou_rpi_0185N_11424.pdf (4.613Mb)
    Other Contributors
    Chow, T. Paul; Karlicek, Robert F.; Bhat, Ishwara B.; Wetzel, Christian;
    Date Issued
    2018-12
    Subject
    Electrical engineering
    Degree
    MS;
    Terms of Use
    This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.;
    Metadata
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    URI
    https://hdl.handle.net/20.500.13015/2324
    Abstract
    In our performance limits projections of stripe-cell superjunction devices (STR-SJ), the specific on-resistances are 0.1 mΩ-cm2 and 1 mΩ-cm2 for 4H-SiC and 0.03 mΩ-cm2 and 0.3 mΩ-cm2 for 2H-GaN with blocking voltages of 1kV and 10kV respectively. Specific on-resistances are 3X and 100X lower than the unipolar 1D limits. Specific on-resistances are 0.03 mΩ-cm2 and 0.3 mΩ-cm2 respectively for 4H-SiC and 0.01 mΩ-cm2 and 0.1 mΩ-cm2 for 2H-GaN of hexagonal layout design (HEX-SJ). HEX-SJ devices can improve Ron,sp by 3X compared with STR-SJ. For GaN, we have obtained much better performance on the vertical natural polarization superjunction (PSJ) devices based on the AlGaN/GaN and AlInN/GaN heterostructures than that for the conventional superjunction devices with alternating p/n pillars. Specific on-resistance of AlGaN/GaN and AlInN/GaN PSJ devices can be as low as 0.06 µΩ-cm2 and 0.6 µΩ-cm2 for BV of 1kV and 10kV respectively. The performance is 1500X and 50000X better than the unipolar limits of GaN devices.; We have determined and evaluated the specific on-resistance (Ron,sp) versus breakdown voltage (BV) tradeoff limits of high-voltage, vertical superjunction (SJ) devices for 4H-SiC and 2H-GaN. Those vertical superjunction devices include conventional p/n doped superjunction devices and novel natural polarization superjunction (PSJ) devices. We have employed a previously published analytical model for the superjunction devices with alternating P and N doped pillars. We have also identified and replaced some unreasonable assumptions in another previous work. Further, this thesis is the first time the performance limits projected for natural polarization superjunction devices.;
    Description
    December 2018; School of Engineering
    Department
    Dept. of Electrical, Computer, and Systems Engineering;
    Publisher
    Rensselaer Polytechnic Institute, Troy, NY
    Relationships
    Rensselaer Theses and Dissertations Online Collection;
    Access
    Restricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Libraries.;
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