Low voltage driven interleaved silicon optical modulator
Authors
Kim, Young Hwa
ORCID
Loading...
Other Contributors
Huang, Zhaoran Rena
Bhat, Ishwara B.
Zhang, Tong
Ji, Wei
Bhat, Ishwara B.
Zhang, Tong
Ji, Wei
Issue Date
2019-05
Keywords
Electrical engineering
Degree
PhD
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
Silicon electro-optical (EO) modulator is one of the key devices in achieving high performance chip-scale optical interconnections. The modulators have been improved dramatically in recent years, especially increasing its bandwidth range to the multiple gigahertz regime. The optical modulator performance metrics in energy consumption, footprint, device structure simplicity, maximum bandwidth and modulation efficiency have become more crucial than ever. Up to date, the smallest dimension of reported optically efficient interleaved PN junction based silicon optical modulator has a pitch width of 400 nm. This large pitch width results in a π-phase shift length of 1.5 to 3 mm, and requires a high driving voltage over 3V.
Description
May 2019
School of Engineering
School of Engineering
Department
Dept. of Electrical, Computer, and Systems Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
Access
Restricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Libraries.