Show simple item record

dc.rights.licenseRestricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Libraries.
dc.contributorShur, Michael
dc.contributorHella, Mona Mostafa
dc.contributorDutta, Partha S.
dc.contributorWashington, Morris A.
dc.contributor.authorLiu, Xueqing
dc.date.accessioned2021-11-03T09:10:17Z
dc.date.available2021-11-03T09:10:17Z
dc.date.created2019-09-18T22:38:48Z
dc.date.issued2019-05
dc.identifier.urihttps://hdl.handle.net/20.500.13015/2405
dc.descriptionMay 2019
dc.descriptionSchool of Engineering
dc.description.abstractTeraFETs, plasmonic field effect transistors (FETs) operating in the terahertz (THz) frequency range, have found applications as sub millimeter-wave and THz components for THz detection, mixing, imaging, etc. Responsivity is a critical parameter for TeraFETs and deserves the investigation and improvement for the advancement of high performance TeraFET detectors. Compact and numerical device models have an essential role in enabling applications for semiconductor-based terahertz technologies. Thus, it is of extreme value to the scientific community to develop effective and efficient models to propel the research and applications for the TeraFETs.
dc.description.abstractIn this thesis, we have developed numerical models for TeraFET detectors in Synopsys Sentaurus TCAD. The model is valid over a wide dynamic input range (from around 5 mV to 6 V). By examining the physical mechanisms in such TCAD models, experimentally-observed saturation effect at high intensity levels (above 1 V) can be understood. The effect is associated with different mechanisms depending on the material system including leakage current, velocity saturation, and avalanche effect. We also developed a compact SPICE model for heterostructure FET (HFET) THz detectors valid over a wide dynamic range (from around 1 mV to 7 V). The model incorporates the saturation effect at high intensity levels (above 1 V) by including leakage components. Furthermore, resonant detection for submicron high mobility devices are observed by including Drude inductance. The developed SPICE-compatible models for TeraFET detectors include channel segmentation and Drude inductance, and are valid from 0.1 THz to 10 THz. The developed model also show the significance of electron inertia at high THz frequencies for long channel devices. All developed models show good agreement with the analytical theory and experimental data and could be effectively used for the simulation, design, and characterization of sub-millimeter wave and Terahertz wave devices and integrated circuits.
dc.language.isoENG
dc.publisherRensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartofRensselaer Theses and Dissertations Online Collection
dc.subjectElectrical engineering
dc.titleNumerical and compact field effect transistor models validated for terahertz detection
dc.typeElectronic thesis
dc.typeThesis
dc.digitool.pid179681
dc.digitool.pid179682
dc.digitool.pid179683
dc.rights.holderThis electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degreePhD
dc.relation.departmentDept. of Electrical, Computer, and Systems Engineering


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record