Electron scattering at transition metal surfaces
Authors
Milosevic, Erik
ORCID
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Other Contributors
Gall, Daniel
Hull, Robert, 1959-
Shi, Jian
Brown, Ethan
Hull, Robert, 1959-
Shi, Jian
Brown, Ethan
Issue Date
2019-08
Keywords
Materials engineering
Degree
PhD
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
In situ and ex situ transport measurements of epitaxial Ru(0001) layers on Al2O3(0001) fitted with the Fuchs and Sondheimer model indicate a room-temperature electron mean free path of 6.7 ± 0.3 nm and a zero surface scattering specularity that is independent of air exposure. The measured product ρo×λ exhibits a temperature dependence, decreasing by 43% as the temperature is lowered from 295 to 77 K. This result is inconsistent with classical transport models, including the FS model, and may be related to temperature- or environment-dependent surface scattering, thickness-dependent phonon-scattering, or a more fundamental break-down of the classical transport models. Boltzmann transport simulations based on the electronic structure of Ru predict a strong anisotropy in the resistivity size effect. Simulations for transport within the basal plane of a Ru(0001) film are in reasonable agreement with experimental results, with the simulated effective mean free path being 10-33% below the experimental values. Applying the experimentally determined Ru mean free path to a polycrystalline interconnect line with a 10 nm half-pitch suggests a two times lower resistance for Ru than for a corresponding Cu line, indicating great promise for Ru as a future interconnect material.
Description
August 2019
School of Engineering
School of Engineering
Department
Dept. of Materials Science and Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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