Growth and properties of semiconducting transition-metal nitride layers

Authors
Wang, Baiwei
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Other Contributors
Gall, Daniel
Shi, Jian
Sundararaman, Ravishankar
Chakrapani, Vidhya
Issue Date
2020-08
Keywords
Materials engineering
Degree
PhD
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
For the purpose of achieving epitaxial Ti1−xMgxN(001) layers, reactive magnetron cosputtering from titanium and magnesium targets is conducted in 15 mTorr pure N2 at 600 °C onto MgO(001) substrate. X-ray diffraction (XRD) indicates a solid solution rocksalt phase for the composition range x = 0 - 0.55 and a decreasing crystalline quality with increasing Mg content, as quantified by the XRD ω rocking-curve width which increases from 0.25° to 0.80°. XRD φ-scans show that all Ti1−xMgxN layers with x ≤ 0.55 are single crystals with a cube-on-cube epitaxial relationship with the substrate: (001)L║(001)S and [100]L║[100]S. In contrast, a larger Mg concentration (x = 0.85) leads to a polycrystalline, phase-segregated, nitrogen-deficient microstructure.
Description
August 2020
School of Engineering
Department
Dept. of Materials Science and Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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