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dc.rights.licenseRestricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Research Libraries.
dc.contributorHull, Robert, 1959-
dc.contributor.authorBearup, Delia Rose
dc.date.accessioned2021-11-03T09:26:35Z
dc.date.available2021-11-03T09:26:35Z
dc.date.created2009-07-27T09:31:34Z
dc.date.issued2009-08
dc.identifier.urihttps://hdl.handle.net/20.500.13015/2733
dc.descriptionAugust 2009
dc.descriptionSchool of Engineering
dc.language.isoENG
dc.publisherRensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartofRensselaer Theses and Dissertations Online Collection
dc.subjectMaterials science and engineering
dc.titleRecovery of crystalline and optoelectronic properties in Si(100) after focused ion beam implantation of Ga+ and annealing
dc.typeElectronic thesis
dc.typeThesis
dc.digitool.pid18379
dc.digitool.pid18380
dc.digitool.pid18382
dc.digitool.pid18381
dc.digitool.pid18383
dc.rights.holderThis electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degreeMS
dc.relation.departmentDept. of Materials Science and Engineering


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