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dc.rights.licenseRestricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Research Libraries.
dc.contributorWetzel, Christian
dc.contributorSchubert, E. Fred
dc.contributorPersans, Peter D., 1953-
dc.contributorBhat, Ishwara B.
dc.contributorDetchprohm, Theeradetch
dc.contributor.authorZhu, Mingwei
dc.date.accessioned2021-11-03T09:47:36Z
dc.date.available2021-11-03T09:47:36Z
dc.date.created2010-06-04T09:32:47Z
dc.date.issued2010-05
dc.identifier.urihttps://hdl.handle.net/20.500.13015/2990
dc.descriptionMay 2010
dc.descriptionSchool of Science
dc.descriptionLighting Research Center
dc.language.isoENG
dc.publisherRensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartofRensselaer Theses and Dissertations Online Collection
dc.subjectPhysics
dc.titleEpitaxy and structural characterizations of green and deep green GaInN / GaN light-emitting diodes
dc.typeElectronic thesis
dc.typeThesis
dc.digitool.pid22946
dc.digitool.pid22947
dc.digitool.pid22949
dc.digitool.pid22948
dc.digitool.pid22950
dc.rights.holderThis electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degreePhD
dc.relation.departmentDept. of Physics, Applied Physics, and Astronomy


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