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Using the genetic algorithm to design GaInN / GaN light-emitting diodes with reduced efficiency droop and reduced spectral instability with respect to injection current

dc.rights.licenseRestricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Research Libraries.
dc.contributorDutta, Partha S.
dc.contributorBhat, Ishwara B.
dc.contributorPersans, Peter D., 1953-
dc.contributorShur, Michael
dc.contributor.authorMirhosseini, Roya
dc.date.accessioned2021-11-03T10:03:49Z
dc.date.available2021-11-03T10:03:49Z
dc.date.created2010-09-27T08:10:03Z
dc.date.issued2010-12
dc.identifier.urihttps://hdl.handle.net/20.500.13015/3114
dc.descriptionDecember 2010
dc.descriptionSchool of Engineering
dc.descriptionSmart Lighting Engineering Research Center
dc.language.isoENG
dc.publisherRensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartofRensselaer Theses and Dissertations Online Collection
dc.subjectElectrical engineering
dc.titleUsing the genetic algorithm to design GaInN / GaN light-emitting diodes with reduced efficiency droop and reduced spectral instability with respect to injection current
dc.typeElectronic thesis
dc.typeThesis
dc.digitool.pid25195
dc.digitool.pid25196
dc.digitool.pid25198
dc.digitool.pid25197
dc.digitool.pid25199
dc.rights.holderThis electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degreePhD
dc.relation.departmentDept. of Electrical, Computer, and Systems Engineering


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