Show simple item record

dc.rights.licenseRestricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Research Libraries.
dc.contributorWetzel, Christian
dc.contributorPersans, Peter D., 1953-
dc.contributorStoler, Paul
dc.contributor.authorDiBiccari, Michael
dc.date.accessioned2021-11-03T10:04:51Z
dc.date.available2021-11-03T10:04:51Z
dc.date.created2011-01-18T10:16:19Z
dc.date.issued2010-12
dc.identifier.urihttps://hdl.handle.net/20.500.13015/3133
dc.descriptionDecember 2010
dc.descriptionSchool of Science
dc.language.isoENG
dc.publisherRensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartofRensselaer Theses and Dissertations Online Collection
dc.subjectPhysics
dc.titleDevelopment and characterization of indium gallium nitride heterostructures for use as light emitters and laser diodes
dc.typeElectronic thesis
dc.typeThesis
dc.digitool.pid26627
dc.digitool.pid26628
dc.digitool.pid26630
dc.digitool.pid26629
dc.digitool.pid26631
dc.rights.holderThis electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degreeMS
dc.relation.departmentDept. of Physics, Applied Physics, and Astronomy


Files in this item

Thumbnail
Thumbnail

This item appears in the following Collection(s)

Show simple item record