| dc.rights.license | Restricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Libraries. | |
| dc.contributor | Bhat, Ishwara B. | |
| dc.contributor.author | Shintri, Shashidhar S | |
| dc.date.accessioned | 2021-11-03T10:11:22Z | |
| dc.date.available | 2021-11-03T10:11:22Z | |
| dc.date.created | 2011-06-24T15:19:41Z | |
| dc.date.issued | 2011-05 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.13015/3289 | |
| dc.description | May 2011 | |
| dc.description | School of Engineering | |
| dc.language.iso | ENG | |
| dc.publisher | Rensselaer Polytechnic Institute, Troy, NY | |
| dc.relation.ispartof | Rensselaer Theses and Dissertations Online Collection | |
| dc.subject | Electrical engineering | |
| dc.title | Growth and characterization of epitaxial Ge on As-passivated (211)Si by chemical vapor deposition for HgCdTe based infrared detector applications | |
| dc.type | Electronic thesis | |
| dc.type | Thesis | |
| dc.digitool.pid | 29360 | |
| dc.digitool.pid | 29361 | |
| dc.digitool.pid | 29363 | |
| dc.digitool.pid | 29362 | |
| dc.digitool.pid | 29364 | |
| dc.rights.holder | This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author. | |
| dc.description.degree | MS | |
| dc.relation.department | Dept. of Electrical, Computer, and Systems Engineering | |
