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dc.rights.licenseRestricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Libraries.
dc.contributorChow, T. Paul
dc.contributorGutmann, Ronald J.
dc.contributorBrown, Dale M.
dc.contributorSchowalter, Leo J.
dc.contributorShur, Michael
dc.contributor.authorMatocha, Kevin
dc.date.accessioned2021-11-03T10:23:02Z
dc.date.available2021-11-03T10:23:02Z
dc.date.created2012-04-11T16:13:19Z
dc.date.issued2003-08
dc.identifier.urihttps://hdl.handle.net/20.500.13015/3497
dc.descriptionAugust 2003
dc.descriptionSchool of Engineering
dc.language.isoENG
dc.publisherRensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartofRensselaer Theses and Dissertations Online Collection
dc.subjectElectrical engineering
dc.titleGaN MOSFETS for high-voltage switching applications
dc.typeElectronic thesis
dc.typeThesis
dc.digitool.pid33648
dc.digitool.pid33649
dc.digitool.pid33651
dc.digitool.pid33650
dc.digitool.pid33652
dc.rights.holderThis electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degreePhD
dc.relation.departmentDept. of Electrical, Computer, and Systems Engineering


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