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dc.rights.licenseRestricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Libraries.
dc.contributorSchubert, E. Fred
dc.contributorSchroeder, John
dc.contributorNayak, Saroj K.
dc.contributorBhat, Ishwara B.
dc.contributorCho, Jaehee
dc.contributor.authorShan, Qifeng
dc.date.accessioned2021-11-03T10:27:44Z
dc.date.available2021-11-03T10:27:44Z
dc.date.created2012-06-28T16:54:31Z
dc.date.issued2012-05
dc.identifier.urihttps://hdl.handle.net/20.500.13015/3554
dc.descriptionMay 2012
dc.descriptionSchool of Science
dc.language.isoENG
dc.publisherRensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartofRensselaer Theses and Dissertations Online Collection
dc.subjectPhysics
dc.titleNon-ideal properties of gallium nitride based light-emitting diodes
dc.typeElectronic thesis
dc.typeThesis
dc.digitool.pid34550
dc.digitool.pid34551
dc.digitool.pid34553
dc.digitool.pid34552
dc.digitool.pid34554
dc.rights.holderThis electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degreePhD
dc.relation.departmentDept. of Physics, Applied Physics, and Astronomy


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