Show simple item record

dc.rights.licenseRestricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Research Libraries.
dc.contributorChow, T. Paul
dc.contributorAgarwal, Anant
dc.contributorBhat, Ishwara B.
dc.contributorSchowalter, Leo J.
dc.contributorShur, Michael
dc.contributor.authorSharma, Santosh K
dc.date.accessioned2021-11-03T10:39:42Z
dc.date.available2021-11-03T10:39:42Z
dc.date.created2007-05-17T19:40:13Z
dc.date.issued2007-05
dc.identifier.urihttps://hdl.handle.net/20.500.13015/3732
dc.descriptionMay 2007
dc.descriptionSchool of Engineering
dc.language.isoENG
dc.publisherRensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartofRensselaer Theses and Dissertations Online Collection
dc.subjectcomputer
dc.subjectSystems engineering
dc.subjectElectrical
dc.titleHigh-voltage epitaxial emitter bipolar junction transistors in 4H-SiC
dc.typeElectronic thesis
dc.typeThesis
dc.digitool.pid5280
dc.digitool.pid5281
dc.digitool.pid5283
dc.digitool.pid5282
dc.digitool.pid5284
dc.rights.holderThis electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degreePhD
dc.relation.departmentDept. of Electrical, Computer, and Systems Engineering


Files in this item

Thumbnail
Thumbnail

This item appears in the following Collection(s)

Show simple item record