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dc.rights.licenseRestricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Research Libraries.
dc.contributorSchubert, E. Fred
dc.contributorBhat, Ishwara B.
dc.contributorSchowalter, Leo J.
dc.contributorSmart, Joseph A.
dc.contributorWetzel, Christian
dc.contributorWilke, Ingrid, 1963-
dc.contributor.authorXi, Yangang
dc.date.accessioned2021-11-03T10:40:41Z
dc.date.available2021-11-03T10:40:41Z
dc.date.created2007-05-23T19:00:25Z
dc.date.issued2006-12
dc.identifier.urihttps://hdl.handle.net/20.500.13015/3750
dc.descriptionDecember 2006
dc.descriptionSchool of Science
dc.language.isoENG
dc.publisherRensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartofRensselaer Theses and Dissertations Online Collection
dc.subjectPhysics
dc.titleMetal-organic vapor-phase epitaxy growth, fabrication, and characterization of III-V nitride optoelectronic devices
dc.typeElectronic thesis
dc.typeThesis
dc.digitool.pid5515
dc.digitool.pid5516
dc.digitool.pid5518
dc.digitool.pid5517
dc.digitool.pid5519
dc.rights.holderThis electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degreePhD
dc.relation.departmentDept. of Physics, Applied Physics, and Astronomy


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