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dc.rights.licenseRestricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Research Libraries.
dc.contributorBhat, Ishwara B.
dc.contributorChow, T. Paul
dc.contributorLu, T.-M. (Toh-Ming), 1943-
dc.contributorSchubert, E. Fred
dc.contributor.authorLi, Canhua
dc.date.accessioned2021-11-03T10:42:02Z
dc.date.available2021-11-03T10:42:02Z
dc.date.created2007-05-31T15:54:10Z
dc.date.issued2006-12
dc.identifier.urihttps://hdl.handle.net/20.500.13015/3787
dc.descriptionDecember 2006
dc.descriptionSchool of Engineering
dc.language.isoENG
dc.publisherRensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartofRensselaer Theses and Dissertations Online Collection
dc.subjectcomputer
dc.subjectand systems engineering
dc.subjectElectrical
dc.titleSelective epitaxial growth of 4H-SiC and its applications for power devices
dc.typeElectronic thesis
dc.typeThesis
dc.digitool.pid5988
dc.digitool.pid5989
dc.digitool.pid5991
dc.digitool.pid5990
dc.digitool.pid5992
dc.rights.holderThis electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degreePhD
dc.relation.departmentDept. of Electrical, Computer, and Systems Engineering


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