Selective epitaxial growth of 4H-SiC and its applications for power devices

dc.rights.license	Restricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Research Libraries.
dc.contributor	Bhat, Ishwara B.
dc.contributor	Chow, T. Paul
dc.contributor	Lu, T.-M. (Toh-Ming), 1943-
dc.contributor	Schubert, E. Fred
dc.contributor.author	Li, Canhua
dc.date.accessioned	2021-11-03T10:42:02Z
dc.date.available	2021-11-03T10:42:02Z
dc.date.created	2007-05-31T15:54:10Z
dc.date.issued	2006-12
dc.identifier.uri	https://hdl.handle.net/20.500.13015/3787
dc.description	December 2006
dc.description	School of Engineering
dc.language.iso	ENG
dc.publisher	Rensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartof	Rensselaer Theses and Dissertations Online Collection
dc.subject	computer
dc.subject	and systems engineering
dc.subject	Electrical
dc.title	Selective epitaxial growth of 4H-SiC and its applications for power devices
dc.type	Electronic thesis
dc.type	Thesis
dc.digitool.pid	5988
dc.digitool.pid	5989
dc.digitool.pid	5991
dc.digitool.pid	5990
dc.digitool.pid	5992
dc.rights.holder	This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degree	PhD
dc.relation.department	Dept. of Electrical, Computer, and Systems Engineering

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