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dc.rights.licenseRestricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Research Libraries.
dc.contributorDutta, Partha S.
dc.contributorBhat, Ishwara B.
dc.contributorLe Coz, Yannick L.
dc.contributorLu, T.-M. (Toh-Ming), 1943-
dc.contributor.authorKumar, Anika
dc.date.accessioned2021-11-03T10:42:53Z
dc.date.available2021-11-03T10:42:53Z
dc.date.created2007-06-05T15:37:24Z
dc.date.issued2006-12
dc.identifier.urihttps://hdl.handle.net/20.500.13015/3805
dc.descriptionDecember 2006
dc.descriptionSchool of Engineering
dc.language.isoENG
dc.publisherRensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartofRensselaer Theses and Dissertations Online Collection
dc.subjectcomputer
dc.subjectand systems engineering
dc.subjectElectrical
dc.titleGrowth of thick lattice mismatched layers of GaxIn1−xAsySb1−y on GaAs substrates from quaternary melts
dc.typeElectronic thesis
dc.typeThesis
dc.digitool.pid6095
dc.digitool.pid6096
dc.digitool.pid6098
dc.digitool.pid6097
dc.digitool.pid6099
dc.rights.holderThis electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degreePhD
dc.relation.departmentDept. of Electrical, Computer, and Systems Engineering


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