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dc.rights.licenseRestricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Research Libraries.
dc.contributorSchubert, E. Fred
dc.contributorSiegel, R. W. (Richard W.)
dc.contributorKim, Jong Kyu
dc.contributor.authorLee, Won Seok
dc.date.accessioned2021-11-03T10:49:04Z
dc.date.available2021-11-03T10:49:04Z
dc.date.created2007-11-12T08:54:22Z
dc.date.issued2007-08
dc.identifier.urihttps://hdl.handle.net/20.500.13015/3946
dc.descriptionAugust 2007
dc.descriptionSchool of Engineering
dc.language.isoENG
dc.publisherRensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartofRensselaer Theses and Dissertations Online Collection
dc.subjectMaterials science and engineering
dc.titleEpitaxial growth of high quality AlN and AlGaN layers for deep ultraviolet light-emitting diodes
dc.typeElectronic thesis
dc.typeThesis
dc.digitool.pid9062
dc.digitool.pid9063
dc.digitool.pid9065
dc.digitool.pid9064
dc.digitool.pid9066
dc.rights.holderThis electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degreeMS
dc.relation.departmentDept. of Materials Science and Engineering


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