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dc.rights.licenseRestricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Research Libraries.
dc.contributorSchubert, E. Fred
dc.contributorKim, Jong Kyu
dc.contributor.authorZhu, Di
dc.date.accessioned2021-11-03T07:44:43Z
dc.date.available2021-11-03T07:44:43Z
dc.date.created2008-03-05T08:28:04Z
dc.date.issued2008-05
dc.identifier.urihttps://hdl.handle.net/20.500.13015/509
dc.descriptionMay 2008
dc.descriptionSchool of Science
dc.language.isoENG
dc.publisherRensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartofRensselaer Theses and Dissertations Online Collection
dc.subjectPhysics
dc.titleStudy of metal contacts to gallium-face and nitrogen-face n-type GaN material
dc.typeElectronic thesis
dc.typeThesis
dc.digitool.pid10234
dc.digitool.pid10235
dc.digitool.pid10237
dc.digitool.pid10236
dc.digitool.pid10238
dc.rights.holderThis electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degreeMS
dc.relation.departmentDept. of Physics, Applied Physics, and Astronomy


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