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    High-Voltage Lateral MOS-Gated FETs in Gallium Nitride

    Author
    Huang, Weixiao
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    11016_Abstract_final.pdf (106.5Kb)
    11017_Weixiao_thesis_final2.pdf (3.387Mb)
    Other Contributors
    Chow, T. Paul; Dutta, Partha S.; Motocha, Kevin; Shur, Michael; Wetzel, Christian;
    Date Issued
    2008-05
    Subject
    Electrical engineering
    Degree
    PhD;
    Terms of Use
    This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.;
    Metadata
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    URI
    https://hdl.handle.net/20.500.13015/547
    Abstract
    Description
    May 2008; School of Engineering; Center for Integrated Electronics
    Department
    Dept. of Electrical, Computer, and Systems Engineering;
    Publisher
    Rensselaer Polytechnic Institute, Troy, NY
    Relationships
    Rensselaer Theses and Dissertations Online Collection;
    Access
    Restricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Research Libraries.;
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    • RPI Theses Online (Complete)

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