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dc.rights.licenseRestricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Research Libraries.
dc.contributorChow, T. Paul
dc.contributorDutta, Partha S.
dc.contributorMotocha, Kevin
dc.contributorShur, Michael
dc.contributorWetzel, Christian
dc.contributor.authorHuang, Weixiao
dc.date.accessioned2021-11-03T07:46:39Z
dc.date.available2021-11-03T07:46:39Z
dc.date.created2008-05-09T15:09:21Z
dc.date.issued2008-05
dc.identifier.urihttps://hdl.handle.net/20.500.13015/547
dc.descriptionMay 2008
dc.descriptionSchool of Engineering
dc.descriptionCenter for Integrated Electronics
dc.language.isoENG
dc.publisherRensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartofRensselaer Theses and Dissertations Online Collection
dc.subjectElectrical engineering
dc.titleHigh-Voltage Lateral MOS-Gated FETs in Gallium Nitride
dc.typeElectronic thesis
dc.typeThesis
dc.digitool.pid11015
dc.digitool.pid11016
dc.digitool.pid11018
dc.digitool.pid11017
dc.digitool.pid11019
dc.rights.holderThis electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degreePhD
dc.relation.departmentDept. of Electrical, Computer, and Systems Engineering


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