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dc.rights.licenseRestricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Libraries.
dc.contributorChow, T. Paul
dc.contributorBhat, Ishwara B.
dc.contributorConnor, Kenneth A.
dc.contributor.authorZhang, Jie
dc.date.accessioned2021-11-03T07:46:55Z
dc.date.available2021-11-03T07:46:55Z
dc.date.created2013-07-10T11:29:11Z
dc.date.issued2012-08
dc.identifier.urihttps://hdl.handle.net/20.500.13015/555
dc.descriptionAugust 2012
dc.descriptionSchool of Engineering
dc.descriptionSmart Lighting Engineering Research Center
dc.language.isoENG
dc.publisherRensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartofRensselaer Theses and Dissertations Online Collection
dc.subjectElectrical engineering
dc.titleInvestigation of temperature effectson GaN MOS capacitors and field-effect transistors
dc.typeElectronic thesis
dc.typeThesis
dc.digitool.pid112783
dc.digitool.pid112784
dc.digitool.pid112786
dc.digitool.pid112785
dc.digitool.pid112787
dc.rights.holderThis electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degreeMS
dc.relation.departmentDept. of Electrical, Computer, and Systems Engineering


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