Investigation of temperature effectson GaN MOS capacitors and field-effect transistors

dc.rights.license	Restricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Libraries.
dc.contributor	Chow, T. Paul
dc.contributor	Bhat, Ishwara B.
dc.contributor	Connor, Kenneth A.
dc.contributor.author	Zhang, Jie
dc.date.accessioned	2021-11-03T07:46:55Z
dc.date.available	2021-11-03T07:46:55Z
dc.date.created	2013-07-10T11:29:11Z
dc.date.issued	2012-08
dc.identifier.uri	https://hdl.handle.net/20.500.13015/555
dc.description	August 2012
dc.description	School of Engineering
dc.description	Smart Lighting Engineering Research Center
dc.language.iso	ENG
dc.publisher	Rensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartof	Rensselaer Theses and Dissertations Online Collection
dc.subject	Electrical engineering
dc.title	Investigation of temperature effectson GaN MOS capacitors and field-effect transistors
dc.type	Electronic thesis
dc.type	Thesis
dc.digitool.pid	112783
dc.digitool.pid	112784
dc.digitool.pid	112786
dc.digitool.pid	112785
dc.digitool.pid	112787
dc.rights.holder	This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degree	MS
dc.relation.department	Dept. of Electrical, Computer, and Systems Engineering

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