Engineering the electronic structure of inse and inse/tmd devices

Abstract

Engineering the band structure is a technique that is used to modify semiconductors in modern electronic devices. There are two problems that advancement in modern electronics currently faces: miniaturization and specialized processing. A potential solution to these problems is the use of two-dimensional (2D) semiconductors. 2D semiconductors have abundant band structure engineering capabilities that can be exploited in creating more efficient and specific applications. This can be done can be intercalating, straining, defect engineering, substrate engineering, alloying, and heterostructuring. In this thesis, heterostructuring and alloying are used to alter the band structure of InSe and InSe/TMD devices. In project one, InSe alloyed with Sulfur and Tellurium shows a change in bandgap depending on the concentration of the alloy components. In project two, multilayered InSe stacked with bilayer WS2 shows the formation of interlayer excitons that can be further tuned with electronic gating.