Show simple item record

dc.rights.licenseRestricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Research Libraries.
dc.contributorChow, T. Paul
dc.contributor.authorTang, Ke
dc.date.accessioned2021-11-03T07:52:22Z
dc.date.available2021-11-03T07:52:22Z
dc.date.created2008-12-15T13:06:24Z
dc.date.issued2008-12
dc.identifier.urihttps://hdl.handle.net/20.500.13015/701
dc.descriptionDecember 2008
dc.descriptionSchool of Engineering
dc.descriptionCenter for Integrated Electronics
dc.language.isoENG
dc.publisherRensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartofRensselaer Theses and Dissertations Online Collection
dc.subjectElectrical engineering
dc.titleInvestigation of surface treatment on the electrical interfacial properties of GaN MOS capacitors with Plasma-TEOS and LTO SiO2 as gate dielectrics
dc.typeElectronic thesis
dc.typeThesis
dc.digitool.pid14182
dc.digitool.pid14183
dc.digitool.pid14185
dc.digitool.pid14184
dc.digitool.pid14186
dc.rights.holderThis electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degreeMS
dc.relation.departmentDept. of Electrical, Computer, and Systems Engineering


Files in this item

Thumbnail
Thumbnail

This item appears in the following Collection(s)

Show simple item record