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dc.rights.licenseRestricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Research Libraries.
dc.contributorSchubert, E. Fred
dc.contributorKim, Jong Kyu
dc.contributorDutta, Partha S.
dc.contributorLu, T.-M. (Toh-Ming), 1943-
dc.contributorPersans, Peter D., 1953-
dc.contributorWetzel, Christian
dc.contributor.authorChen, Kaixuan
dc.date.accessioned2021-11-03T07:52:46Z
dc.date.available2021-11-03T07:52:46Z
dc.date.created2008-12-17T12:30:57Z
dc.date.issued2008-12
dc.identifier.urihttps://hdl.handle.net/20.500.13015/714
dc.descriptionDecember 2008
dc.descriptionSchool of Science
dc.descriptionSmart Lighting Engineering Research Center
dc.language.isoENG
dc.publisherRensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartofRensselaer Theses and Dissertations Online Collection
dc.subjectPhysics
dc.titleRecombination dynamics in Si-doped AlGaN and ultraviolet light-emitting diodes grown on sapphire and bulk AlN substrates by metal-organic vapor-phase epitaxy
dc.typeElectronic thesis
dc.typeThesis
dc.digitool.pid14250
dc.digitool.pid14251
dc.digitool.pid14253
dc.digitool.pid14252
dc.digitool.pid14254
dc.rights.holderThis electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degreePhD
dc.relation.departmentDept. of Physics, Applied Physics, and Astronomy


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