Modeling and characterization of amorphous silicon thin film transistors

Authors
Bhalerao, Shantanu A.
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Other Contributors
Shur, Michael
Issue Date
2008-12
Keywords
Electrical engineering
Degree
MS
Terms of Use
Attribution-NonCommercial-NoDerivs 3.0 United States
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
The thesis presents modeling of capacitance-voltage characteristics of thin film transistors and thermal analysis of self-heating effects in thin film transistors and transistor arrays. The parameter extraction from C-V measurements is described and the limitations of the C-V characterization are discussed. The distributive nature of the capacitance in the device channel is shown to account for the capacitance frequency dispersion. To zero order, this effect can be reproduced by a lumped element equivalent circuit proposed by Elmore (the Elmore model) and by a new Variable Dispersion Model (VDM) accounting for finite interaction time between traps and states above the mobility edge. VDM has been developed and implemented in AIM-Spice. The combined VDM-Elmore model is shown to reproduce the entire dispersion observed in printed TFTs. Dynamic thermal simulations for an amorphous Si TFT show that the temperature rise due to self heating can be noticeable (a few degrees for relatively short interconnects). We also present the dynamic thermal circuit for a TFT pixel that was simulated in Spice.
Description
December 2008
School of Engineering
Department
Dept. of Electrical, Computer, and Systems Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
Access
CC BY-NC-ND. Users may download and share copies with attribution in accordance with a Creative Commons Attribution-Noncommercial-No Derivative Works 3.0 License. No commercial use or derivatives are permitted without the explicit approval of the author.