dc.rights.license | Restricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Libraries. | |
dc.contributor | Schubert, E. Fred | |
dc.contributor | Schadler, L. S. (Linda S.) | |
dc.contributor | Gall, Daniel | |
dc.contributor | Lu, James Jian-Qiang | |
dc.contributor | Siegel, R. W. (Richard W.) | |
dc.contributor.author | Ma, Ming | |
dc.date.accessioned | 2021-11-03T07:58:56Z | |
dc.date.available | 2021-11-03T07:58:56Z | |
dc.date.created | 2013-09-09T14:40:00Z | |
dc.date.issued | 2013-05 | |
dc.identifier.uri | https://hdl.handle.net/20.500.13015/865 | |
dc.description | May 2013 | |
dc.description | School of Engineering | |
dc.description.abstract | In this dissertation, we present a technique that provides full control of refractive index and surface structure at the LED surface: LEDs having patterned graded-refractive-index (GRIN) coatings (GRIN LEDs). Micro-patterned GRIN coatings that enhance light extraction and enable control of the emission pattern in GaN-based LEDs are designed and demonstrated. The coatings are patterned into arrays of GRIN micro-pillars, which are composed of five dielectric layers made of (TiO_2)_x(SiO_2)_1-x with the bottom coating (adjacent to semiconductor) having the highest refractive index and the top coating (adjacent to air) having the lowest refractive index. The GRIN micro-pillars, including their planar geometric shape and size, are structured for maximum LEE and emission-pattern control. LEDs patterned with an array of four-pointed-star-shaped GRIN micro-pillars show a 155% enhancement in light-output power over an uncoated planar reference LED. In addition, the peak emission intensity of the GRIN LEDs is shown to be controllable from ±20° to ±50° off the surface-normal, demonstrating GRIN LEDs with high LEE and emission-pattern control. These two characteristics can be tuned to match specific target applications of the LEDs. | |
dc.description.abstract | Light-emitting diodes (LEDs) are the next-generation lighting source due to their high luminous efficacy, high reliability, environmental benignity, and the potential to offer new functionalities such as a controllable emission pattern and polarized emission. However, the large refractive-index contrast between the LED semiconductor and air (i) limits the light-extraction efficiency (LEE) of LEDs, and, at the same time, (ii) affects the emission directionality of LEDs. A solution to both problems will require advanced control of refractive index and surface structure at the LED semiconductor surface. | |
dc.language.iso | ENG | |
dc.publisher | Rensselaer Polytechnic Institute, Troy, NY | |
dc.relation.ispartof | Rensselaer Theses and Dissertations Online Collection | |
dc.subject | Materials engineering | |
dc.title | Optically functional structures on GaN-based light-emitting diodes for light-extraction efficiency enhancement and emission pattern control | |
dc.type | Electronic thesis | |
dc.type | Thesis | |
dc.digitool.pid | 167103 | |
dc.digitool.pid | 167104 | |
dc.digitool.pid | 167105 | |
dc.rights.holder | This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author. | |
dc.description.degree | PhD | |
dc.relation.department | Dept. of Materials Science and Engineering | |