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dc.rights.licenseRestricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Libraries.
dc.contributorSchubert, E. Fred
dc.contributorSchadler, L. S. (Linda S.)
dc.contributorGall, Daniel
dc.contributorLu, James Jian-Qiang
dc.contributorSiegel, R. W. (Richard W.)
dc.contributor.authorMa, Ming
dc.date.accessioned2021-11-03T07:58:56Z
dc.date.available2021-11-03T07:58:56Z
dc.date.created2013-09-09T14:40:00Z
dc.date.issued2013-05
dc.identifier.urihttps://hdl.handle.net/20.500.13015/865
dc.descriptionMay 2013
dc.descriptionSchool of Engineering
dc.description.abstractIn this dissertation, we present a technique that provides full control of refractive index and surface structure at the LED surface: LEDs having patterned graded-refractive-index (GRIN) coatings (GRIN LEDs). Micro-patterned GRIN coatings that enhance light extraction and enable control of the emission pattern in GaN-based LEDs are designed and demonstrated. The coatings are patterned into arrays of GRIN micro-pillars, which are composed of five dielectric layers made of (TiO_2)_x(SiO_2)_1-x with the bottom coating (adjacent to semiconductor) having the highest refractive index and the top coating (adjacent to air) having the lowest refractive index. The GRIN micro-pillars, including their planar geometric shape and size, are structured for maximum LEE and emission-pattern control. LEDs patterned with an array of four-pointed-star-shaped GRIN micro-pillars show a 155% enhancement in light-output power over an uncoated planar reference LED. In addition, the peak emission intensity of the GRIN LEDs is shown to be controllable from ±20° to ±50° off the surface-normal, demonstrating GRIN LEDs with high LEE and emission-pattern control. These two characteristics can be tuned to match specific target applications of the LEDs.
dc.description.abstractLight-emitting diodes (LEDs) are the next-generation lighting source due to their high luminous efficacy, high reliability, environmental benignity, and the potential to offer new functionalities such as a controllable emission pattern and polarized emission. However, the large refractive-index contrast between the LED semiconductor and air (i) limits the light-extraction efficiency (LEE) of LEDs, and, at the same time, (ii) affects the emission directionality of LEDs. A solution to both problems will require advanced control of refractive index and surface structure at the LED semiconductor surface.
dc.language.isoENG
dc.publisherRensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartofRensselaer Theses and Dissertations Online Collection
dc.subjectMaterials engineering
dc.titleOptically functional structures on GaN-based light-emitting diodes for light-extraction efficiency enhancement and emission pattern control
dc.typeElectronic thesis
dc.typeThesis
dc.digitool.pid167103
dc.digitool.pid167104
dc.digitool.pid167105
dc.rights.holderThis electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degreePhD
dc.relation.departmentDept. of Materials Science and Engineering


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