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dc.rights.licenseRestricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Libraries.
dc.contributorWetzel, Christian
dc.contributorLewis, Kim M.
dc.contributorShur, Michael
dc.contributorBhat, Ishwara B.
dc.contributorLu, James Jian-Qiang
dc.contributorDetchprohm, Theeradetch
dc.contributor.authorHou, Wenting
dc.date.accessioned2021-11-03T07:58:58Z
dc.date.available2021-11-03T07:58:58Z
dc.date.created2013-09-09T14:40:20Z
dc.date.issued2013-05
dc.identifier.urihttps://hdl.handle.net/20.500.13015/866
dc.descriptionMay 2013
dc.descriptionSchool of Science
dc.description.abstractIn addition to the fabrication of LEDs, the development of green LDs was studied. To extend the emission wavelength of AlGaInN-based LDs to a 500 nm green spectral region, both highly efficient active layers and suitable optical confinement are critical. This work presents the development progress by first identifying active regions that show stimulated emission at 450 nm under optical excitation. Then such layers were embedded in an etched cavity. Under electrical injection, the same transition appeared as a short-wavelength shoulder of a broader band. By using a silver mirror on the p-side, an enhanced optical confinement was obtained, and the 450 nm emission showed an even better dominance over the long-wavelength contribution. As an alternative, an optical confinement was implemented by applying AlGaN cladding layers in ridge wave-guided structures. A superior optical confinement was achieved in an epitaxial ridge re-growth approach. Under pulsed electrical injection, narrow-peak emission in the 510 - 520 nm range was achieved, rendering the approach suitable for the further development of blue and green laser diodes.
dc.description.abstractSolid state lighting via light emitting diodes (LEDs) and laser diodes (LDs) is a rapidly progressing technology with the potential to greatly exceed the efficiency of traditional lighting systems. This dissertation focuses on the development of electrical contacts and patterning schemes for highly efficient green LEDs and LD structures.
dc.description.abstractEfficiency of LEDs can be greatly improved by means of nano-patterning processes. LEDs grown on nano-imprint patterned sapphire substrates showed promising performance, with improvement in both internal quantum efficiency and light extraction efficiency. As an alternative to nano-imprint lithography, this study utilized a simple method to generate irregular nano-patterns by a Ni self-assembly process and applied the process to both sapphire substrate and n-GaN template. In both approaches, the nano-patterned LEDs showed an improvement in light output power.
dc.description.abstractFor the device fabrication of LEDs and LDs, low-resistance ohmic contacts are essential for high efficiency. In search of a highly transparent ohmic contact to p-type GaN, I analyzed various metal/indium-tin-oxide (ITO) (Ag/ITO, AgCu/ITO, Ni/ITO, and NiZn/ITO) contact schemes and compared them with Ni/Au, NiZn/Ag, and ITO contacts. For ITO-based contacts, the inserted metal layer can boost conductivity while the ITO thickness can be optimized for constructive transmission interference on GaN exceeding the extraction from bare GaN. The best compromise was obtained for an Ag/ITO (3 nm /67 nm) ohmic contact, with a relative transmittance of 97% of the bare GaN near 530 nm, and a specific contact resistance of 3×10^-2 Ωcm^2. The contact proved particularly suitable for green light emitting diodes in epi-up geometry. Graphene as another alternative transparent p-contact was also evaluated.
dc.description.abstractFurthermore, this dissertation offered a pre-deposition treatment to contact schemes on undoped and n-doped GaN, rendering a standard post-deposition annealing step unnecessary. As-deposited Ti/Al/Ti/Au usually forms a Schottky contact. By means of oxygen rapid thermal annealing prior to the metal deposition, the contact developed an ohmic behavior with a specific contact resistance of 3.8×10^-5 Ωcm^2. X-ray photoelectron spectroscopy characterization showed that the Ga 3d electron binding energy increased with the pre-treatment, indicating a shift of the Fermi level closer to the conduction band edge. This explained the improvement in contact performance.
dc.description.abstractWhile low contact resistance to GaN-based devices has been achieved to p-type and n-type layers separately, contacts are likely to degrade when both types need to be integrated into a single fabrication process in bipolar devices. This dissertation presents a solution to the problem by the pre-deposition oxygen thermal treatment on n-GaN. By utilizing this process, an important gain in device fabrication flexibility was realized. LEDs with the integrated process for both n- and p-contacts showed lower series resistance and lower voltage drop compared to those with separately optimized contacts.
dc.language.isoENG
dc.publisherRensselaer Polytechnic Institute, Troy, NY
dc.relation.ispartofRensselaer Theses and Dissertations Online Collection
dc.subjectPhysics
dc.titleContact formation and patterning approaches for group-III nitride light emitters
dc.typeElectronic thesis
dc.typeThesis
dc.digitool.pid167106
dc.digitool.pid167107
dc.digitool.pid167108
dc.rights.holderThis electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
dc.description.degreePhD
dc.relation.departmentDept. of Physics, Applied Physics, and Astronomy


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