First-principles investigations of electron scattering at surfaces and grain boundaries in nanoscale metallic conductors

Authors
Zhou, Tianji
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Other Contributors
Gall, Daniel
Meunier, Vincent
Shi, Yunfeng
Sundararaman, Ravishankar
Issue Date
2018-08
Keywords
Materials engineering
Degree
PhD
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
Surface roughness effects are analytically and computationally investigated by modeling electron reflection at discrete step edges. A Landauer formalism for incoherent scattering leads to a parameter-free expression for the resistivity contribution from surface mound-valley undulations that is additive to the resistivity associated with bulk and surface scattering. In the classical limit where the electron reflection probability matches the ratio of the step height h divided by the film thickness d, the additional resistivity Δρ = /(g0d)×ω/ξ , where g0 is the specific ballistic conductance and ω/ξ is the ratio of the root-mean-square surface roughness divided by the lateral correlation length of the surface morphology.
Description
August 2018
School of Engineering
Department
Dept. of Materials Science and Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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