Tunable interfacial thermal conductance by molecular dynamics

Authors
Shen, Meng
ORCID
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Other Contributors
Keblinski, Pawel
Gall, Daniel
Huang, Liping
Peles, Yoav
Issue Date
2013-08
Keywords
Materials science and engineering
Degree
PhD
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
Finally, we also replaced graphene layers by a few WSe_2 sheets and observed that interfacial thermal resistance of a Si/n-WSe_2/Si structure increases linearly with interface thickness at least for 1 < n <= 20, indicating diffusive heat transfer mechanism, in contrast to ballistic behavior of a few graphene layers. The corresponding thermal conductivity (0.048 W m^-1 K^-1) of a few WSe_2 layers is rather small. By comparing phonon dispersion of graphene layers and WSe_2 sheets, we attribute the diffusive behavior of a few WSe_2 sheets to abundant optical phonons at low and medium frequencies leading to very short mean free path.
Description
August 2013
School of Engineering
Department
Dept. of Materials Science and Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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