Spectroscopy on the efficiency in GaInN LEDs and solar cells

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Authors
Zhao, Liang
Issue Date
2013-12
Type
Electronic thesis
Thesis
Language
ENG
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Physics
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Abstract
In an exploration of such GaInN/GaN MQW junctions for their suitability in high concentration solar cells, we test our structures to solar concentrations up to 150 and temperatures up to 400 °C. Under AM1.5G illumination, an open circuit voltage as high as 2.1 V is found and an IQE as high as 64.2% is obtained. We find these cells to work fine up to the maximum temperature applied while showing continuous increase of the specific output power of 0.46 mW/cm2 at 25 ºC to 0.59 mW/cm2 at 250 ºC. Devices based on GaInN/GaN heterostructures therefore should be ideal for the development of top cells in multijunction solar cell arrangements.
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December 2013
School of Science
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Rensselaer Polytechnic Institute, Troy, NY
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