High-voltage gallium nitride MOS-channel HEMTs
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Authors
Li, Zhongda
Issue Date
2013-08
Type
Electronic thesis
Thesis
Thesis
Language
ENG
Keywords
Electrical engineering
Alternative Title
Abstract
The monolithically integrated GaN LEDs and GaN power MOSC-HEMTs have been demonstrated with high temperature (225 °C) operation capabilities. This is the first demonstration of such technology in the world to the author's knowledge. The integration procedures have been presented and the experimental results have been shown. The integration can possibly be one of the basic building blocks of future light-emitting power ICs (LEPICs) for many smart lighting applications.
Description
August 2013
School of Engineering
School of Engineering
Full Citation
Publisher
Rensselaer Polytechnic Institute, Troy, NY