High speed reconfigurable circuits and data converters for communication systems in SiGe HBT technology

Authors
LeRoy, Mitchell R.
ORCID
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Other Contributors
McDonald, John F. (John Francis), 1942-
Lewis, Kim M.
Saulnier, Gary J.
Zhang, Tong
Issue Date
2016-05
Keywords
Electrical engineering
Degree
PhD
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
An 8-bit two-step flash ADC is designed for use in a fast time interleaved converter. The two-step approach greatly reduces power and area by splitting the conversion process into two smaller flash steps. A 40 Gs/s four-way time interleaved converter with a front sample-and-hold amplifier is developed to push the sampling speed of the conversion. A clock generation strategy for time interleaving is described and presented. A new distributed sample-and-hold amplifier is developed to further increase sample rates. To test the time interleaved converter an 8-bit R2R digital-to-analog (DAC) converter is also designed. The ADC and DAC were fabricated on a 3.0 mm by 3.4 mm test die in 9HP and verified on both a room temperature probe stand at 300 K and in a cryogenic test stand at 77 K. This is the first demonstration of tens of thousands of SiGe transistors on a die functioning at liquid nitrogen temperature. The cryogenic testing process and required equipment are also explored and discussed.
Description
May 2016
School of Engineering
Department
Dept. of Electrical, Computer, and Systems Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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