Performance limits of 4H-SiC and 2H-GaN vertical superjunction (SJ) devices
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Authors
Zhou, Xiang
Issue Date
2018-12
Type
Electronic thesis
Thesis
Thesis
Language
ENG
Keywords
Electrical engineering
Alternative Title
Abstract
In our performance limits projections of stripe-cell superjunction devices (STR-SJ), the specific on-resistances are 0.1 mΩ-cm2 and 1 mΩ-cm2 for 4H-SiC and 0.03 mΩ-cm2 and 0.3 mΩ-cm2 for 2H-GaN with blocking voltages of 1kV and 10kV respectively. Specific on-resistances are 3X and 100X lower than the unipolar 1D limits. Specific on-resistances are 0.03 mΩ-cm2 and 0.3 mΩ-cm2 respectively for 4H-SiC and 0.01 mΩ-cm2 and 0.1 mΩ-cm2 for 2H-GaN of hexagonal layout design (HEX-SJ). HEX-SJ devices can improve Ron,sp by 3X compared with STR-SJ. For GaN, we have obtained much better performance on the vertical natural polarization superjunction (PSJ) devices based on the AlGaN/GaN and AlInN/GaN heterostructures than that for the conventional superjunction devices with alternating p/n pillars. Specific on-resistance of AlGaN/GaN and AlInN/GaN PSJ devices can be as low as 0.06 µΩ-cm2 and 0.6 µΩ-cm2 for BV of 1kV and 10kV respectively. The performance is 1500X and 50000X better than the unipolar limits of GaN devices.
Description
December 2018
School of Engineering
School of Engineering
Full Citation
Publisher
Rensselaer Polytechnic Institute, Troy, NY