Simulation of light emitting diodes under piezoelectric polarization

Elsaesser, David Richard
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Wetzel, Christian
Terrones, H. (Humberto)
Shur, Michael
Persans, Peter D., 1953-
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Through wave propagation modeling, based on a finite-difference time-domain (FDTD) method, I investigated the optical effects of structures necessary for the for-mation of strain-reduced and cubic GaN LEDs. With the cubic GaN LED I investigated the effect on light extraction efficiency (LEE) due to a triangular-stripe shape that cubic GaN forms in, a result of our growth process for cubic GaN. Comparing the v-stripe cubic GaN to a planar wurtzite LED, I find that the cubic triangular-stripe cubic GaN structure increases the LEE by a factor of 1.9. In addition, I model ways to further enhance the LEE of v-stripe cubic GaN LEDs; namely, a removal of the v-stripe Si substrate, and implementation of a flip-chip LED design. By removing the Si substrate I find a 20% increase in LEE as compared to the cubic GaN LED still on the substrate. Through using a flip-chip design with the triangular-striped cubic GaN it was possible to enhance the LEE by a factor of 1.62 over the cubic GaN LED on a Si substrate. For the strain-reduced LEDs I simulated a nanopatterned GaN/GaInN template. The nanopatterned template was found to exhibit a 40% increase in LEE when compared to a planar GaN templated.
May 2017
School of Science
Dept. of Physics, Applied Physics, and Astronomy
Rensselaer Polytechnic Institute, Troy, NY
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